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Solid source molecular beam epitaxy

Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE

  • Barrier layers
  • Barrier thickness
  • Combination cap
  • Dot formation time
  • Dot formations
  • GaAs
  • Gallium alloys
  • Gallium arsenide
  • Growth front
  • Heterojunctions
  • Heterostructures
  • In-situ
  • InAlGaAs
  • InAs/GaAs
  • Indium
  • MBE
  • Molecular beam epitaxy
  • Molecular beams
  • Multilayer heterostructures
  • Multilayer QD stack
  • Multilayer stacks
  • Multilayers
  • Quantum dot
  • Quantum dots
  • Semiconducting gallium
  • Semiconductor quantum dots
  • Solid source molecular beam epitaxy
  • Vertical stacking
Publication Type  Journal Article
Year of Publication  2010
Authors  Haider, N.; Suseendran, J.; Chakrabarti, S.; Herrera, M.; Bonds, M.; Browning, N.D.
Journal Title  Journal of Nanoscience and Nanotechnology
Volume  10
Issue  8
Pages  5202 - 5206
Journal Date  2010///
Key Words  Combination cap; Dot formation time; MBE; Multilayer QD stack; Barrier layers; Barrier thickness; Combination cap; Dot formations; GaAs; Growth front; Heterostructures; In-situ; InAlGaAs; InAs/GaAs; MBE; Multilayer heterostructures; Multilayer stacks; Qua
Notes  

Export Date: 5 July 2011Source: Scopus

URL  http://www.scopus.com/inward/record.url?eid=2-s2.0-79955439267&partnerID=40&md5=b531566c6d3375c4988c191f3be3c9a8
DOI  10.1166/jnn.2010.2380
Citation Key  3157

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