| Publication Type | Journal Article | |
| Year of Publication | 2010 | |
| Authors | Adhikary, S.; Halder, N.; Chakrabarti, S.; Majumdar, S.; Ray, S.K.; Herrera, M.; Bonds, M.; Browning, N.D. | |
| Journal Title | Journal of Crystal Growth | |
| Volume | 312 | |
| Issue | 5 | |
| Pages | 724 - 729 | |
| Journal Date | 2010/// | |
| Key Words | A1. Nanostructure; A3.Molecular beam epitaxy; A3.Quantum dots; B2.Semiconducting III-V materials; A1. Nanostructure; B2.Semiconducting III-V materials; Capping layer; Capping thickness; Compressive strain; Defect-free; GaAs; Heterostructures; High-resolut | |
| Notes | Export Date: 5 July 2011Source: Scopus | |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-74549154620&partnerID=40&md5=b792c3d4636b746e3e735d21e78df287 | |
| DOI | 10.1016/j.jcrysgro.2009.11.067 | |
| Citation Key | 3173 |