0 Haider, N. Suseendran, J. Chakrabarti, S. Herrera, M. Bonds, M. Browning, N.D. 2010 Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE Journal of Nanoscience and Nanotechnology 10 8 5202 - 5206 2010/// Combination cap, Dot formation time, MBE, Multilayer QD stack, Barrier layers, Barrier thickness, Combination cap, Dot formations, GaAs, Growth front, Heterostructures, In-situ, InAlGaAs, InAs/GaAs, MBE, Multilayer heterostructures, Multilayer stacks, Qua Export Date: 5 July 2011Source: Scopus http://www.scopus.com/inward/record.url?eid=2-s2.0-79955439267&partnerID=40&md5=b531566c6d3375c4988c191f3be3c9a8